Dr. Redwan Noor Sajjad

At MIT, he was part of a team that fabricated the world’s first sub-10 nm MoS 2 transistor and predicted its performance limits. His other works at MIT include impact of defects in Tunnel-FETs and characterization of group III-V semiconductor based Fin-FETs to study scaling issues. As a graduate student at UVA, he predicted - utilizing optics like behavior of carriers in graphene - the novel phenomena of transmission gap engineering. He also developed large-scale quantum mechanical simulation platforms for various materials such as 2D materials, nanowires and topological insulators. Dr. Sajjad has received multiple awards for his works on exploratory materials and devices and given numerous invited talks at various institutions.

He joined Bangladesh University of Engineering and Technology as an Assistant Professor in the Department of Glass and Ceramic Engineering in 2017 He is currentlly working on thin film photovoltaics and various coatings on glass for the application of energy efficient windows.

Current research interests:
Thin film photovoltaics, optical coatings on glass, nanoscale carrier transport

Education:
PhD, Electrical Engineering, University of Virginia, 2014.
MSc, Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology, 2008.
BSc, Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology, 2006.

Courses:
GCE 6403 – Photonic Ceramics
GCE 6405 – Ceramic Renewable Energy

Awards:

• SRC TECHCON best in session award 2016
• Charles L. Brown Graduate Student Fellowship for Excellence, UVA 2013-14
• Louis T. Rader Graduate Research Award, UVA 2013
• INDEX (NRI) student poster award 2013
• EEE Faculty Dean’s list - Bangladesh Univ. of Engg. & Tech. 2001-2005
• University Merit Scholarship - Bangladesh Univ. of Engg. & Tech. 2001-2005

Selected publications:

1. Redwan N. Sajjad, Winston Chern, Judy Hoyt and Dimitri Antoniadis, “Trap assisted tunneling and its impact on subthreshold swing in tunnel field effect transistors”, IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4380 (2016).
2. R. Pandey, C. Schulte-Braucks, R. N. Sajjad, M. Barth, R. Ghosh, B. Grisafe, P. Sharma, N. von den Driesch, A. Vohra, B. Rayner, R. Loo, S. Mantl, D. Buca, C-C. Yeh, C-H. Wu, W. Tsai, D. Antoniadis and S. Datta, "Performance Benchmarking of p-type In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 and Ge/Ge 0.93 Sn 0.07 Hetero-junction Tunnel FETs for Low Voltage Logic", International Electron Devices Meeting (IEDM), San Francisco, 2016.
3. Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N. Sajjad, Amir Tavakkoli, Wei Chen, Shiang Fang, Xi Ling, Jing Kong, Mildred Dresselhaus, Efthimios Kaxiras, Karl Berggren, Dimitri Antoniadis, Tomás Palacios, “MoS 2 Field-Effect transistor with sub-10 nm channel length”,Nano Letters, vol. 16, no. 12, pp. 7798-7806 (2016).
4. K. M. Masum Habib, Redwan N. Sajjad and Avik Ghosh, “Modified Dirac Hamiltonian for efficient quantum mechanical simulations of micron sizeddevices”, Applied Physics Letters, vol. 108, 113105 (2016).
5. K. M. Masum Habib, Redwan N. Sajjad and Avik Ghosh, “Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking”, Physical Review Letters, vol. 114, 176801 (2015).
6. Redwan N. Sajjad, Frank Tseng, K. M. Masum Habib, Avik Ghosh, “Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene”, Physical Review B, vol.92, 205408 (2015).
7. Redwan N. Sajjad and Avik Ghosh, “Manipulation of chiral tunneling by gate geometry: switching in graphene with transmission gaps”, ACS Nano, vol. 7, no. 11, 9808 (2013).
8. Redwan N. Sajjad, S. Sutar, J. Lee and Avik Ghosh, “Manifestation of Chiral tunneling at a tilted graphene p-n junction”, Physical Review B, vol. 86, 155412 (2012).
9. Redwan N. Sajjad and Khairul Alam, “Electronic properties of a strained <100>silicon nanowire”, Journal of Applied Physics, vol. 105, no. 4, 044307 (2009).